| 摘要 |
PURPOSE:To obtain a nonvolatile semiconductor device which has an array circuit similar to the conventional EPROM and can be made finer in shape and larger in capacity by providing source and drain diffusion areas below a thick insulating film and separating the adjoining source and drain diffusion areas from each other by means of a groove formed from the vicinity of the central part of the thick insulating film into a semiconductor substrate. CONSTITUTION:In a semiconductor device having a plurality of semiconductor elements, each of which is provided with source and drain areas 104 and 102 of the second conductivity type formed on a semiconductor substrate 101 of the first conductivity type, a first gate electrode 108 formed of the channel area 105 between the areas 104 and 102 and set into an electrically floating state through a first gate insulating film 107, and a second gate electrode 110 which becomes a control electrode through a second gate insulating film 109 formed on the electrode 108, the areas 104 and 102 are provided below a third insulating film 106 thicker than the first insulating film 107 for separating the channel area 105 from channel areas 105 of adjacent elements and the areas 104 and 102 are separated from each other by means of a groove 103 formed from the film 106 into the substrate 101.
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