| 摘要 |
PURPOSE:To provide an uniform film composition in the preparation of a thick film by a liquid phase epitaxial method by adopting a specific bismuth rare earth element iron garnet single crystal wherein one part of the rare earth elements is substituted with Eu. CONSTITUTION:The oxide garnet single crystal is represented by a formula: (BiaEubLn1-a-b)3(Fe1-cMc)5O12 (Ln is at least one element selected from rare earth elements excluding Eu; M is at least one element selected from Al, Ga, In and Sc; 0.15<a<0.6; 0.01<b<0.2; 0<c<0.1). The oxide garnet single crystal is prepared by allowing to grow on a rare earth gallium garnet single crystal substrate by a liquid crystal epitaxial method. The values of a, b and c in the composition are therein required to be selected so that the lattice constant of the used garnet substrate single crystal coincides with the lattice constant of the oxide garnet single crystal. |
