发明名称 MANUFACTURE OF SEMICONDUCTOR LIGHT EMITING ELEMENT
摘要 PURPOSE:To protect resist against burning when it is used as a mask by a method wherein a gold plating layer is used as a mask for an ion milling. CONSTITUTION:A buffer layer 2, an active layer 3, a clad layer 4, and a cap layer 5 are formed on a substrate 1. An insulating film 6 is formed, an opening is provided, a P-type electrode 7 is built, the whole substrate 1 is thermally treated, and the rear side of the substrate is polished. Moreover, an N-type electrode 9 is provided onto the rear of the substrate 1, which is thermally treated, and a TiPtAu electrode 8 is formed on the surface. Rubber negative type photoresist 13 is applied onto the electrode 8, and a pattern is formed. Then, novolak positive type photoresist 13 is applied, a pattern is formed, and an Au plating layer I 10 is formed on the center of an element where resist is not provided. Next, only the resist 13 is dissolved to remove, and an Au plating layer II 12 is formed. Lastly, the resist 11 is separated, and ion milling is carried out to form a pellet isolation part.
申请公布号 JPH0353568(A) 申请公布日期 1991.03.07
申请号 JP19890189417 申请日期 1989.07.21
申请人 NEC CORP 发明人 OZAKI MASAMI
分类号 H01L33/12;H01L33/14;H01L33/30;H01L33/40;H01L33/44;H01S5/00 主分类号 H01L33/12
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