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发明名称
MOS TYPE SEMICONDUCTOR DEVICE OF HIGH BREAKDOWN STRENGTH
摘要
申请公布号
JPH0353564(A)
申请公布日期
1991.03.07
申请号
JP19890189179
申请日期
1989.07.21
申请人
NEC CORP
发明人
SASAKI KUNIO
分类号
H01L21/76;H01L29/06;H01L29/78
主分类号
H01L21/76
代理机构
代理人
主权项
地址
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