| 摘要 |
<p>PURPOSE:To improve the yield by superposing a gate electrode on part of a drain electrode and providing a projection part at the overlap part between the gate electrode and drain electrode. CONSTITUTION:The gate electrode GT is superposed on part of the drain electrode SD2 and the projection part GTP is provided at the overlap part between the gate GT and drain electrode SD2. Thus, the gate electrode GT is superposed upon part of the drain electrode ST2, so the overlap area between the gate electrode GT and drain electrode SD2 becomes small and the projection part GTP is provided at the overlap part between the gate electrode GT and drain electrode SD2, so the step cutting of the drain electrode SD2 is precluded. Consequently, a short-circuit is hardly caused and the yield is improved.</p> |
