| 摘要 |
PURPOSE: To make it possible to decrease noises by constituting a sensing ele ment of multiple layers of single crystal magnetic metals and forming these multiple magnetic material layers in such a manner that the transition between the reverse parallel alignment state and parallel alignment state of the magnetic material layers takes place at small magnetic field intervals. CONSTITUTION: The sensing element is formed of the multiple layers 2 of the single crystal magnetic metals bonded to the specific structures in which the layers 20 of the magnetic materials consist of alloys of metals, such as Fe, Co and Ni, and the thickness is 9 to 90Åand that the layers 21 of the nonmagnetic materials consist of Mn, Cr, V, Ti, etc., and the thickness is <30Å. The bonds among the magnetic layers 201 , 202 , 293 of the multiple layers 2 are of an antiferromagnetic type and the magnetization of the layers exhibit the reverse parallel alignment like F and F'. The powerful magnetic reluctance is induced in the multiple layers 2 when the transition takes place from the reverse parallel alignment state to the parallel alignment state at the short magnetic field intervals parted several gauss from a zero field to a finite field. |
