| 摘要 |
PURPOSE:To grow a crystal defect in a short time by repeating heat treatment at the predetermined speed of a temperature rise corresponding to the oxygen concentration of a substrate as a substrate treating process. CONSTITUTION:The silicon substrate, oxygen concentration thereof is 1.5X10<13> cm<-3> or higher, is thermally treated at the speed of the temperature rise at the rate of 5-14 deg.C/min., and once or more heat treatment is repeated at the speed of the temperature rise at the rate of 14 deg.C/min. or lower. The silicon substrate, oxygen concentration thereof is 1.5X10<13>cm<-3> or lower, is thermally treated at the speed of the temperature rise at the rate of 5 deg.C/min. or lower, and once or more heat treatment is repeated at the speed of the temperature rise at the rate of 14 deg.C/min. or lower. A low temperature as much as possible is preferable as low temperature value where the temperature rise is started, and a temperature such as 500-900 deg.C can apply. The defect grows with the higher setting of the maximum temperature, but the setting of approximately 950-1,300 deg.C is preferable because too high setting often extinguishes the defect. |
