VERFAHREN ZUM HERSTELLEN VON HALBLEITERBAUELEMENTEN.

摘要

In a method for manufacturing an alloy contact between a wafer-shaped semiconductor substrate (4) and a metal contact wafer (6) a material bond for which the alloy layer reaches only slightly into the interior of the semiconductor substrate (4) is achieved by individually heating the layer arrangement of semiconductor substrate (4) and contact wafer (6) and by means of thermal radiation in a vacuum and by using panel heating elements (13, 17) whose area is larger than the area of the layer arrangement.