| 摘要 |
<p>PURPOSE:To eliminate the need for a 2nd dry etching stage occurring in the generation of fluctuation in element sizes and to uniformize the sizes of all the diode elements by using a 2nd photoresist pattern constituted of a single diode pattern interposed with a light shielding film. CONSTITUTION:A 1st photoresist 14 is formed on a transparent side electrode film 13 on a substrate 12 and with the 1st photoresist 14 as a mask, the transparent electrode film 13 is etched. The light shielding film 16 and a semiconductor film 17 are successively formed and the 2nd photoresist 18 is formed on the semiconductor film 17. The semiconductor film 17 and the light shielding film 16 are etched with the 2nd photoresist 18 as a mask and a side etching part 51 is formed in the light shielding film 16. An electrode film 19 is formed over the entire surface and a 3rd photoresist 20 is formed. The electrode film 19 is etched with the 3rd photoresist 20 as a mask. The area of the diode part is uniformized in this way and the leak current occurring in the photoirradiation is suppressed.</p> |
