发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To reduce an undesired radiation, a mutual modulation and to enhance a conversion gain by providing a wiring layer grounded in an external circuit between a transistor which inputs a local oscillation output and a transistor which inputs a signal. CONSTITUTION:Emitters of a first transistor Tr1 and a second transistor Tr2 are connected in a differential type in package, a local oscillation output is input to either the first or second transistor, connectors are connected to the connecting parts of emitters, and a differential circuit element having a third transistor Tr3 which inputs a signal is provided. In this case, wiring layers 1042, 1043 grounded in an external circuit are provided between the transistor which inputs a signal and the transistor which inputs a signal. Thus, an output from a local oscillator can be raised to enhance a conversion gain.</p>
申请公布号 JPH0346361(A) 申请公布日期 1991.02.27
申请号 JP19890182192 申请日期 1989.07.14
申请人 TOSHIBA CORP 发明人 MATSUNAGA TAIRA;YAMAKI BUNSHIROU;KIMURA TAKASHI;ENDO KAZUO;ITO TAKAHIRO;TANIZEN SHIYOUICHI;TADA NOBORU
分类号 H01L21/8238;H01L21/82;H01L21/8222;H01L21/8234;H01L27/06;H01L27/092 主分类号 H01L21/8238
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