Low leakage silicon-on-insulator CMOS structure and method of making same

摘要

A CMOS device is provided with a field shield region below one of the P and N channel MOS transistors, whereby the field shield region is formed to have the opposite conductivity of both the one MOS transistor it underlies, and of the substrate, thereby permitting the field shield region to be biased to a potential for turning off any anomalous back channel leakage current in the one MOS transistor, and also permitting the substrate to be biased to an opposite polarity for turning off such leakage current in the other MOS transistor.