| 摘要 |
PURPOSE:To accurately evaluate large or small of the internal strain by applying X-rays to each sample in an angular range where an escape peak of an X-ray detector appears, and determining the internal strain of a crystal substrate of the sample from the difference of the intensity of each scattering X-ray from the sample. CONSTITUTION:A standard sample S0 is obtained by mirror-finishing an Si single crystal substrate with the innernal strain removed, while a sample S1 to be measured is obtained by mirror-finishing an Si single crystal substrate. The sample S1 is mounted to a sample bed provided in a goniometer of an X-ray diffraction apparatus. X-rays are applied to the mirror-finished surface of the sample S1. On the other hand, as the goniometer is rotated in an angle range where an escape peak of an X-ray detector appears, the intensity of the scattering X-rays from the sample S1 is detected by the X-ray detector, thereby obtaining a peak profile of the sample S1 indicating the relation between the detecting value I and diffraction angle 2theta. Similarly, a peak profile of the sample S0 is obtained. The internal strain is thus determined from peak tops I0 and I1 of the respective samples S0 and S1. |
