| 摘要 |
PURPOSE:To keep a rewritten data for a long time at interrupt of power supply by connecting a drain of a floating gate transistor (TR) to one electrode terminal of a capacitor and a source of a MOS TR via a switch and connecting a control gate. CONSTITUTION:One MOS TR T1 and one capacitor C whose one electrode terminal (storage node) 3 connects to the source of the TR T1 are provided as a DRAM section and one floating gate TR MT is provided as an EEPROM section. Then the source 10 of the TR T1 connects to the storage node 3 of the capacitor C and the drain 9 of the TR MT connects to the source 10 via a mode selection TR T2 as a switch and the control gate 5 connects to the node 3. Thus, even when the data of the EEPROM section is rewritten and the power is interrupted, the data is stored for a long time. |
