| 摘要 |
1. Circuit associating an insulated gate field-effect transistor (30) with a bipolar transistor (31), the drain being connected to the collector and the source to the emitter, a control terminal (G) being connected to the gate, characterized in that the base (B) of the bipolar transistor is connected on the one hand to the gate (G) of the field-effect transistor via a threshold device (32) and on the other hand to the connection between emitter and source (S) via a resistor (33) of high value, as a result of which the circuit functions like a field-effect transistor for low control voltages and like a bipolar transistor for control voltages higher than the threshold value of the threshold device. |
