| 摘要 |
PURPOSE:To manufacture a good quantum thin wire by a method wherein a second semiconductor whose evaporation speed is thermally larger than that of a first semiconductor having a recessed part is formed on the first semiconductor and is heated and the second semiconductor is left at the recessed part of the first semiconductor. CONSTITUTION:A second semiconductor 4 whose evaporation speed is thermally larger than that of a first semiconductor 2 having a recessed part is formed on the first semiconductor 2 and is heated; a second semiconductor 5 is left at the recessed part of the first semiconductor 2. That is to say, when the second semiconductor 4 whose evaporation speed is larger than that of the first semiconductor 2 having the recessed part is formed on the first semiconductor 2, the second semiconductor is formed at the recessed part of the first semiconductor 2. When, however, it is heated thermally, the second semiconductor 4 excluding the recessed part can be removed selectively. Since evaporation is used in this case, the second semiconductor 5 can be left only at the recessed part with good controllability and without producing a crystal defect. Thereby, the crystal defect is not produced on the surface of a quantum thin wire and at an interface; the quantum thin wire can be formed to be flat and as a straight line or in an arbitrary shape. |
