Method for fabrication of self-aligned asymmetric field effect transistors

摘要

A method for fabrication of a field effect transistor includes forming an insulator film of a proper thickness at a predetermined region on one principal surface of a compound semiconductor substrate, forming a gate electrode of a refractory metal on a side wall of the insulator film in a self-alignment manner, and implanting ions with a mask of the insulator film and the gate electrode to form ion implanted regions in the substrate asymmetrically with respect to the gate electrode.