发明名称 Dual ion beam ballistic alloying process
摘要 The invention discloses a dual ion beam ballistic alloying process for forming a film such as diamond onto a substrate, which comprises the steps of: (a) cleaning the surface of the substrate with a first energy beam of inert atoms; (b) depositing a layer of a desired non-hydrocarbon substance on the substrate with a low energy, sputtered atomic beam; (c) simultaneously exposing the substrate to said first energy beam of inert atoms with a high energy to grow a ballistically alloyed layer having a thickness of about 10-2000 ANGSTROM ; and (d) reducing the energy level of the first, high energy beam to cause the growth of the layer of said substance on said substrate to a final desired thickness.
申请公布号 US4992298(A) 申请公布日期 1991.02.12
申请号 US19880255573 申请日期 1988.10.11
申请人 BEAMALLOY CORPORATION 发明人 DEUTCHMAN, ARNOLD H.;PARTYKA, ROBERT J.
分类号 B29C33/56;B29D11/00;C23C14/02;C23C14/22 主分类号 B29C33/56
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