发明名称 |
Dual ion beam ballistic alloying process |
摘要 |
The invention discloses a dual ion beam ballistic alloying process for forming a film such as diamond onto a substrate, which comprises the steps of: (a) cleaning the surface of the substrate with a first energy beam of inert atoms; (b) depositing a layer of a desired non-hydrocarbon substance on the substrate with a low energy, sputtered atomic beam; (c) simultaneously exposing the substrate to said first energy beam of inert atoms with a high energy to grow a ballistically alloyed layer having a thickness of about 10-2000 ANGSTROM ; and (d) reducing the energy level of the first, high energy beam to cause the growth of the layer of said substance on said substrate to a final desired thickness.
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申请公布号 |
US4992298(A) |
申请公布日期 |
1991.02.12 |
申请号 |
US19880255573 |
申请日期 |
1988.10.11 |
申请人 |
BEAMALLOY CORPORATION |
发明人 |
DEUTCHMAN, ARNOLD H.;PARTYKA, ROBERT J. |
分类号 |
B29C33/56;B29D11/00;C23C14/02;C23C14/22 |
主分类号 |
B29C33/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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