| 摘要 |
PURPOSE:To obtain a new method of formation of a uniform functional deposition film over a wide area at high speed by a method wherein a polelike film-forming space, having a bandlike member as a side wall is formed while the band-like member is being moved continuously, and microwave plasma is grown in the film-forming space using a specific microwave applicating means. CONSTITUTION:A polelike film forming space, having a moving bandlike member 101, is formed while the bandlike member is being moved continuously in longitudinal direction. Raw gas for forming of a deposition film is introduced into the above- mentioned film forming space through the intermediary of a gas feeding means 112, and at the same time, microwave plasma is grown in the above-mentioned film forming space by emitting or transmitting microwave energy from a microwave application means 108 in such a manner that a directivity is grown in one direction vertical to the progressing direction of the microwave against the progressing direction of the microwave. As a result, the above-mentioned side wall, which is exposed to the microwave plasma, is constituted and a deposition film is formed on the surface of the bandlike member 101 which is moved continuously. |
