| 摘要 |
PURPOSE:To realize a high density and a thin shape by a method wherein a base member is left at the inside of a semiconductor element and an inner lead part of a copper-foil lead is formed on the base member. CONSTITUTION:In a semiconductor device where a semiconductor element 13 having bonding pads 15 is fixed, copper-foil leads 12 are formed in advance on a base member 11; opening parts 16 are formed in parts corresponding to the bonding pads 15; a formation face of the bonding pads 15 is bonded and fixed to a face on the opposite side of a formation face of the copper-foil leads 12. Wires 18 electrically connect the copper-foil leads 12 and the bonding pads 15. That is to say, the base member is not left around the semiconductor element 13; the semiconductor elements 13 can be mounted by narrowing the intervals between them. Thereby, a high-density mounting operation can be executed and a thin shape of the semiconductor device can be realized. |
