Anisotropic deposition of silicon dioxide.

摘要

In a radio-frequency plasma deposition reactor (10), SiO2 is deposited from a source (16) of tetraethoxysilane (TEOS). The deposition is made to be anisotropic, that is, to be deposited preferentially on horizontal surfaces, by use in the deposition atmosphere of a constituency such as NH3 or NF3 which inhibits SiO2 deposition, along with a radio-frequency power in excess of 100 watts, which preferentially removes the inhibiting gas from horizontal surfaces through ion impact.