| 摘要 |
PURPOSE:To simplify process control by depositing oxide films having different thickness selectively on a source and drain part and electrode part on a substrate, irradiating a beam having a single condition thereon, and activating impurities. CONSTITUTION:By using the fact that regular periodic relationship exists between the thickness of an SiO2 film and the reflection coefficient against laser, the SiO2 film 4 is deposited on the source and drain part to the thickness of 3,300Angstrom , and the SiO2 film 3 having the thickness of 2,500Angstrom is deposited on the poly Si electrode 2. Then the difference in the absorption ratios of laser energy becomes 50%. When the laser beam is irradiated thereon, the activation of the impurities which have been implanted without chaning power, the increase in the diameter of a poly Si crystal particle, and the low resistance can be readily attained. |
