发明名称 Device for protection against the parasitic effects caused by negative impulses of power supply voltages in monolithic integrated circuits including a power device for driving an inductive load and a control device for said power device.
摘要 <p>The device for protection against the parasitic effects caused by negative impulses of power supply voltages is applied to monolithic integrated circuits including a power device (Q3, Q4) for driving an inductive load (L) and a control device (R3, R2, Q2, Q5) with a voltage limiter (Q2, Z1) for the power device (Q3, Q4). It provides for the introduction of shielding elements (40, 70) accomplished in the form of annular pockets, of various sizes, suitable for the containment of the voltage limiter's active components.</p>
申请公布号 EP0410513(A2) 申请公布日期 1991.01.30
申请号 EP19900201948 申请日期 1990.07.18
申请人 SGS-THOMSON MICROELECTRONICS S.P.A. 发明人 RACITI, SALVATORE;PALARA, SERGIO
分类号 H01L29/73;H01L21/331;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/732 主分类号 H01L29/73
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