| 摘要 |
PURPOSE:To make it possible to obtain an excellent pn junction by installing a solid phase diffusion layer which forms a conductivity type identical to the other party layer induced by the diffusion of impurities in the other party layer to either a first conductivity type layer or a second conductivity layer. CONSTITUTION:A pn junction is provided by forming a p type GaAlAs layer 2 having an impurity density and Al mixed crystal ration higher than an n type GaAlAs layer 3 and the n type GaAlAs layer 3 with a liquid phase epitaxial growth method. After the pn junction is provided, continuous heat treatment is carried out at a higher temperature than the liquid phase epitaxial growth temperature so as to form a solid phase diffusion layer 6 by the diffusion of impurities in the n type GaAlAs layer 3 from the side of the p type GaAlAs layer 2 and then a pn junction section in the n type GaAlAs layer 3. It is, therefore, possible to improve the pn junction in terms of crystallinity and hence stabilize its characteristics. |
