A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
申请公布号
US4988533(A)
申请公布日期
1991.01.29
申请号
US19880203583
申请日期
1988.05.27
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
FREEMAN, DEAN W.;LUTTMER, JOSEPH D.;SMITH, PATRICIA B.;DAVIS, CECIL J.