发明名称 MANUFACTURE OF SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To prevent the decrease of the breakdown strength between trenches by forming a charge-storage electrode having an electric connection to an element region through an opening. CONSTITUTION:At the upper side of a trench 3 having an SiO2 thin film 4 inside, an opening is made in the SiO2 thin film 4 only in the direction of its linking to the element region in the periphery of the trench 3, and a charge- storage electrode 10 made from poly-Si and having an electric connection with the element region through the opening is made. Accordingly, the upper part of the poly-Si linking to a LOCOS 8 is masked with an oxide film 11, and only the direction of its linking to the element region makes a contact section. And, this prevents the decrease of the breakdown strength between trenches.
申请公布号 JPH0320077(A) 申请公布日期 1991.01.29
申请号 JP19890155438 申请日期 1989.06.16
申请人 MATSUSHITA ELECTRON CORP 发明人 KOIKE NORIO
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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