| 摘要 |
PURPOSE:To improve the through put in a semiconductor manufacturing process by a method wherein, when a treatment is conducted in a high pressure atmo sphere, a pretreatment chamber and an after-treatment chamber are constituted as a load-lock chamber and provided in front and in the rear of a treatment chamber. CONSTITUTION:On both sides of an ashing main chamber 1, a preheating cham ber 30 and a cooling unit 40 are constituted as a load lock chamber. A loading/ unloading switching mechanisms 16 and 17 are provided between the ashing main chamber 1 and the preheat chamber 30, and also between the ashing main chamber 1 and the cooling unit 40. For example, a preheat treatment is conducted on the substrate such as a semiconductor wafer 2 under a depressed state of about 10Torr, and the solvent in the photoresist coated on the surface of the substrate such as a semiconductor wafer 2 and the like is removed effi ciently in a short period. The ashing treatment of the substrate such as the semiconductor wafer 2 and the like is completed, and the treated substrate is carried out to a cleaning unit 40. On the other hand, on the cleaning unit, the substrate such as the semiconductor wafer 2 and the like is cleaned in a high voltage state, and it is cooled. |
