SINGLE CRYSTAL SILICON SUBSTRATE,申请号JP19890169151-传众专利搜索

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发明名称	SINGLE CRYSTAL SILICON SUBSTRATE
摘要
申请公布号	JPH0316117(A)	申请公布日期	1991.01.24
申请号	JP19890169151	申请日期	1989.06.30
申请人	RICOH CO LTD;RICOH RES INST OF GEN ELECTRON	发明人	IRINODA MITSUGI;HAGA KOICHI
分类号	H01L21/20;H01L21/84	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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