发明名称 METHOD OF PRODUCING SEMICONDUCTOR DEVICES
摘要 The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.
申请公布号 EP0355799(A3) 申请公布日期 1991.01.23
申请号 EP19890115504 申请日期 1989.08.23
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH;TELEFUNKEN ELECTRONIC GMBH 发明人 KASPER, ERICH, DR. RER. NAT.;KONIG, ULF, DR. ING.;WORNER, KLAUS, DIPL.-ING.
分类号 H01L21/20;H01L21/285;H01L21/331;(IPC1-7):H01L21/82 主分类号 H01L21/20
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