发明名称 Semiconductor switch with overtemperature protection
摘要 <p>A semiconductor switch contains a power bipolar switch element (T1) for control of the energisation of a load or a bridge of such elements. The switch elements, which may be transistors or darlington multiple transistors, have voltage dropping means (R1) connected in the leads to their control bases, which voltage dropping means may be a series resistor (R1) or a constant current circuit. The switch has temperature sensitive means, such as a diode (D1), for diverting current from the control base of the or each switching element to terminate its conduction if the temperature of the element becomes too high. The switch device is used in a switching system for a motor vehicle, for example, where central control is required of a plurality of loads at various locations. <IMAGE></p>
申请公布号 GB2234112(A) 申请公布日期 1991.01.23
申请号 GB19900011928 申请日期 1990.05.29
申请人 * TEXAS INSTRUMENTS LIMITED 发明人 ANDREW * MARSHALL;DEREK * COLMAN;PHILIP JOHN * CAVANAGH;DAVID PETER * DALE;ANDREW * MARSHALL
分类号 H01L29/73;H01L21/331;H01L21/8222;H01L27/02;H01L27/06;H01L27/07;H01L29/732;H03K17/08;H03K17/0812;H03K17/082;H03K17/18;H03K17/60;H03K17/62;H03K17/66 主分类号 H01L29/73
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