CRIMP-TYPE SEMICONDUCTOR DEVICE HAVING NON-ALLOY STRUCTURE

摘要

A crimp-type semiconductor device having a non-alloy structure according to this invention has a silicon pellet (60) including a plurality of cathode electrodes (70) and a plurality of gate electrodes (72) arranged to be alternately staggered with the cathode electrodes (70) at the cathode side, and an anode electrode (82) at the anode side. The cathode electrodes (70) are crimped by a cathode electrode post (80) via an electrode member (78) constituted by a thin soft-metal plate (76) and a hard metal plate (74). The anode electrode (82) is crimped by an anode electrode post (86) via an electrode member (84). Opposing surfaces of the electrodes (70, 72, 82), the electrode members (78, 84), and the electrode posts (80, 86) are not bonded to but crimped in contact with each other. The electrode members (78, 84) are formed to cover the entire surfaces of the cathode electrode (70) and the anode electrode (82), respectively, and the entire surfaces of the cathode electrode post (80) and the anode electrode post (82), respectively. The electrode members (78, 84) and the electrode posts (80, 86) are positioned with respect to each other by positioning guides (96, 88), respectively.