发明名称 Semiconductor memory device
摘要 A semiconductor memory device capable of operating at high speeds, and a sense circuit and a decoder circuit that can be suitably used for the memory device. A latch function is imparted to at least either one of the decoder circuit or the sense circuit in the semiconductor memory device.
申请公布号 US4986666(A) 申请公布日期 1991.01.22
申请号 US19880277261 申请日期 1988.11.29
申请人 HITACHI DEVICE ENGINEERING CO., LTD.;HITACHI LTD. 发明人 HOMMA, NORIYUKI;HIGUCHI, HISAYUKI;IDEI, YOJI;NAMBU, HIROAKI;SAKURAI, YOSHIAKI
分类号 G11C7/06;G11C7/10;G11C8/10;G11C11/416 主分类号 G11C7/06
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