| 摘要 |
<p>PURPOSE:To efficiently reduce the oxygen contained in the gaseous hydride as impurities to a minimum concn. and to apply the hydride to the production of a semiconductor by bringing the gaseous hydride into contact with a specified copper compd. CONSTITUTION:A gaseous hydrige (e.g. AsH3, PH3 and SiH4, etc.) or the gaseous hydride diluted with an inert gas such as H2, N2 and Ar (contg. <=100ppm O2) is brought into contact with the copper arsenide (e.g. Cu3As and Cu5As2), copper phosphite (e.g. Cu3P and Cu3P2), copper silicide (e.g. Cu4Si and Cu5Si), copper selenid (e.g. Cu2Se and CuSe) and copper boride (e.g. Cu3B2) deposited on a carrier to remove O2 contained in the hydride. The empty cylinder linear velocity of the gaseous hydride in the catalytic reaction is preferably controlled to <=30cm/sec, the temp. to 0-100 deg.C and the pressure to 0.1-10kg/cm<2>G. The oxygen content is reduced to <=0.1ppm or further to <=0.01ppm.</p> |
