| 摘要 |
PURPOSE:To attain the reduction of manufacturing term, the increase in the yield and the cutdown of production cost by a method wherein a semiconductor chip having highly integrated inner circuits operated by low voltage power supply is mounted on another semiconductor chip operated by high voltage power supply corresponding to input and output circuits so as to be electrically connected. CONSTITUTION:After providing MOS field-effect transistors 11 on respective silicon substrates 12, 13, aluminum wirings 10 connecting to transistors 11 are provided; next, interlayer insulating films are deposited on the surfaces including the wirings 10; and then interlayer insulating films on the wirings 10 are etched to make opening parts. Next, the surfaces of the opening parts are gold-plated to form gold electrodes 8 and then the whole surface coated with a polyimide resin film 9 is etched back to expose the gold electrodes 8 only; semiconductor chips 1, 2 are formed; and then the gold electrodes 8 of the semiconductor chips 1, 2 are aligned with each other and subjected to contact bonding. Accordingly, the semiconductor chips 1, 2 are electrically connect ed and the chip 2 is fixed on the chip 1. Through these procedures, the reduction of manufacturing term, the increase in yield and the cutdown of production cost can be attained. |
