Surface topology simulation device for semiconductor substrate - uses network topology with approximation of movement of treated surface by movement of surfaces with same conc.

摘要

The surface topology simulation device allows the region of the substrate surface including the area to be treated to be divided into a number of partial zones with a network Topology (31) corresponding to the structure and surface topology of the semiconductor. The movement of the treated substrate surface is approximated by the movement of surfaces with the same conc as the diffused particle cone, with calculation of the diffusion coefficients for each partial zone. The surfaces exhibiting the same conc are calculated to allow a 3-dimensional surface topology to be provided USE - For semiconductor substrate etching process.