| 摘要 |
PURPOSE: To enable effectively reducing the size of a conductive material layer of a lower part on which a contact hole is to be formed, so that high level integration of a semiconductor device is enabled, by forming a contact hole by using a photoetching technique and forming an insulating film spacer on the side wall of the contact hole. CONSTITUTION: After MOSFET's 20A, 20B which are adjacent to each other interposing a source electrode 4 are formed, an insulating film 5 is formed on the whole surface and is flatened, and an etching stopper layer 6 is formed. The etching stopper layer 6 on the source electrode 4 and a part of the insulating film 5 are etched. After a contact hole 13 having a side wall 13A is formed, an insulating film 7 is formed on the whole surface, the insulating film 7 is anisotropically etched by using the etching stopper layer 6, and a spacer 7A of an insulating film is formed on the side wall 13A of the contact hole 13. After the etching stopper layer 6 is eliminated, a conductive material layer 8 for a bit line is formed on the whole surface, and a bit line 8A is electrically connected to the respective source electrodes 4 of the MOSFET's 20A, 20B by using the conducive material layer 8 for the bit line. |
