发明名称 |
Process for continuously forming a large area funtional deposited film by microwave PCVD method and an apparatus suitable for practicing the same. |
摘要 |
<p>A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma. An apparatus suitable for practicing said method.</p> |
申请公布号 |
EP0406691(A2) |
申请公布日期 |
1991.01.09 |
申请号 |
EP19900112249 |
申请日期 |
1990.06.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KANAI, MASAHIRO;MATSUYAMA, JINSHO;NAKAGAWA, KATSUMI;KARIYA, TOSHIMITSU;FUJIOKA, YASUSHI;TAKEI, TETSUYA;ECHIZEN, HIROSHI |
分类号 |
C23C16/50;C23C16/54;H01J37/32;H01L31/076;H01L31/20 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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