| 摘要 |
<p>Electrical connection is provided to a device region (3,4) bounded by an insulating region (12a,12b,9) and adjacent one major surface (1a) of a semiconductor body (1) by applying a flowable organic material to form an organic layer (20) on the one major surface (1a), defining a masking layer (30) over the organic layer (20), etching the organic layer (20) selectively with respect to the underlying device and insulating regions through a window (31) in the masking layer (30) to form an opening (21) exposing a contact area (11) of the device region (3,4) and depositing electrically conductive material, for example tungsten, to form a conductive pillar (40) within the opening (21) in contact with the contact area (11). The organic layer (20) is then removed so as to expose the conductive pillar (40), a layer 50 of insulating material is provided over the pillar, the insulating layer is etched to expose a top surface of the pillar and electrically conductive material deposited to contact the pillar (40).</p> |
