| 摘要 |
PURPOSE:To make a semiconductor device suitable for digital operation with simple configuration by impressing a prescribed fixed regular voltage not to generate break-over, providing an input / output terminal in one of inner layers at least and taking-out an output. CONSTITUTION:A p-layer 1, n-layer 2, p-layer 3 and n-layer 4 are laminated. Then, an anode electrod is provided in the p-layer 1, a cathode electrode is provided in the n-layer 4 and a gate electrode is provided in the inside n-layer 2. The fixed regular voltage is impressed between these anode and cathode and this regular voltage is selected to a low value not to generate the break- over in which four-layer structure reaches snap-back intrinsic for a cylister. Then, a gate electrode G is defined as the input / output terminal of this semiconductor device. Accordingly, when a gate voltage gradually rises up in a state that the fixed voltage is impressed between the anode and cathode, the gate voltage flows in a reverse direction and next goes to be 0. By utilizing a state 2 and a state 4 that the current goes to be 0, a digital semiconductor device is realized to be operated in the two stable states. Thus, a three-terminal semiconductor element can be obtained based on a new operation principle suitable for the digital operation. |
