| 摘要 |
PURPOSE: To enable fast intrinsic layer film and to improve photoelectric transfer efficiency by, on a P-type intrinsic a-Si layer, laminating a low power I layer (intrinsic layer) with output of low high-frequency power, and a high power I layer with the output of high high-frequency power, and a low power I layer with the output of low high-frequency power, in this order, for forming an intrinsic layer. CONSTITUTION: On a glass substrate 10, an ITO(Indium Thin Oxide) layer 20 and an SnO2 layer 30 of lower part electrode are laminated by spattering, and on the SnO2 layer 30, a P-type intrinsic a-Si layer 40 is vapor-deposited by thickness about 100Å. Then, on the P-type intrinsic a-Si layer 40, an intrinsic a-Si layer 50 is formed by thickness about 5000Å. In other words, on the P-type intrinsic a-Si layer 40, a low power I layer 50a of thickness about 300 A is formed by the output of low RF power (high frequency power). Further, on the low power I layer 50a, a high power I layer 50b of thickness about 4000Å is formed by conversion to high RF power output, and finally, for better joint characteristics with an N-type a-Si layer 60, a low power I layer 50c of thickness about 700Åis formed by low RF power output. Thus, the intrinsic a-Si layer 50 is formed. |
