发明名称 |
Method for generating thin layers on a silicone base |
摘要 |
The invention provides a method for generating thin layers on a silicon base having a high purity, thermal stability and good dielectric properties wherein non-functionalized organosiloxanes with alkyl groups or alkyl and aryl groups are photochemically polymerized and/or cross-linked by means of pulsed laser radiation with a wavelength of less than 400 nm where the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 KHz and the energy density is at least 1 J/cm2 and the irradiation takes placed with one or more pulses. The layers can be used as passivating and insulating layers for semiconductor components and circuits.
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申请公布号 |
US4983419(A) |
申请公布日期 |
1991.01.08 |
申请号 |
US19890384291 |
申请日期 |
1989.07.21 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HENKEL, HANS-JOACHIM;MARKERT, HELMUT;ROTH, WOLFGANG;KAUTEK, WOLFGANG |
分类号 |
C08J3/28;C09D183/04;G03F7/075;H01L21/312 |
主分类号 |
C08J3/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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