发明名称 Method for generating thin layers on a silicone base
摘要 The invention provides a method for generating thin layers on a silicon base having a high purity, thermal stability and good dielectric properties wherein non-functionalized organosiloxanes with alkyl groups or alkyl and aryl groups are photochemically polymerized and/or cross-linked by means of pulsed laser radiation with a wavelength of less than 400 nm where the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 KHz and the energy density is at least 1 J/cm2 and the irradiation takes placed with one or more pulses. The layers can be used as passivating and insulating layers for semiconductor components and circuits.
申请公布号 US4983419(A) 申请公布日期 1991.01.08
申请号 US19890384291 申请日期 1989.07.21
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HENKEL, HANS-JOACHIM;MARKERT, HELMUT;ROTH, WOLFGANG;KAUTEK, WOLFGANG
分类号 C08J3/28;C09D183/04;G03F7/075;H01L21/312 主分类号 C08J3/28
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