| 发明名称 |
Semiconductor integrated circuit device |
| 摘要 |
A semiconductor integrated circuit device includes a tetraethylorthosilicate film between a TiN film and a field oxide film disposed. This structure greatly reduced the possibility of separation of films in the bonding structure and contact failure as part of a wire bonding structure.
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| 申请公布号 |
US4984056(A) |
申请公布日期 |
1991.01.08 |
| 申请号 |
US19890450455 |
申请日期 |
1989.12.14 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIMOTO, HITOSHI;TSUMURA, KIYOAKI |
| 分类号 |
H01L21/60;H01L23/29;H01L23/532 |
主分类号 |
H01L21/60 |
| 代理机构 |
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