| 摘要 |
A glass encapsulated semiconductor diode and a method for glass encapsulation of a fusion to form a semiconductor diode is disclosed. The fusion comprises a body of semiconductor material having a PN junction therein and metal electrodes affixed to opposed major surfaces thereof. The fusion is encircled by a ring-shaped glass member with an inner surface of the ring-shaped glass member fused to an edge surface of the body of semiconductor material to form a protective layer overlying the PN junction. The ring-shaped glass member is formed and fused to the edge of the body of semiconductor material by placing the fushion and a prefabricated glass ring, preferably cut from stress relieved glass tubing, encircling the fusion in a furnace. A weight is applied to the upper surface of the prefabricated glass ring. An atmosphere comprising a predetermined mixture of nitrogen and water vapor is established in the fusion furnace and the temperature of the fusion furnace is increased and decreased in accordance with a predetermined program to cause the prefabricated glass ring to soften and fuse to the edge surface of the body of semiconductor material to form a protective layer, comprising the ring-shaped glass member, overlying the PN junction. |
