发明名称 Bonded substrate of semiconductor elements having a high withstand voltage
摘要 A bonded substrate comprises a first semiconductor substrate in which a plurality of semiconductor elements are formed, a second semiconductor substrate adhered to the first semiconductor substrate so as to support it by means of an insulating layer interposed therebetween, a first semi-insulating polysilicon layer interposed between the first semiconductor substrate and the insulating layer, and a second semi-insulating polysilicon layer interposed between the insulating layer and the second semiconductor substrate. The semi-insulating polysilicon layers serve to reduce the voltage applied to the insulating layer and to prevent the insulating layer from being etched.
申请公布号 US4984052(A) 申请公布日期 1991.01.08
申请号 US19890418587 申请日期 1989.10.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOSHINO, YUTAKA;BABA, YOSHIRO;OSAWA, AKIHIKO;YANAGIYA, SATOSHI
分类号 H01L21/02;H01L21/762;H01L21/763;H01L27/12 主分类号 H01L21/02
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