发明名称 |
Bonded substrate of semiconductor elements having a high withstand voltage |
摘要 |
A bonded substrate comprises a first semiconductor substrate in which a plurality of semiconductor elements are formed, a second semiconductor substrate adhered to the first semiconductor substrate so as to support it by means of an insulating layer interposed therebetween, a first semi-insulating polysilicon layer interposed between the first semiconductor substrate and the insulating layer, and a second semi-insulating polysilicon layer interposed between the insulating layer and the second semiconductor substrate. The semi-insulating polysilicon layers serve to reduce the voltage applied to the insulating layer and to prevent the insulating layer from being etched.
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申请公布号 |
US4984052(A) |
申请公布日期 |
1991.01.08 |
申请号 |
US19890418587 |
申请日期 |
1989.10.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOSHINO, YUTAKA;BABA, YOSHIRO;OSAWA, AKIHIKO;YANAGIYA, SATOSHI |
分类号 |
H01L21/02;H01L21/762;H01L21/763;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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