发明名称 |
Silicide bridge contact process |
摘要 |
A method of forming a bridge contact between a source diffusion region of a transfer gate FET and a polysilicon-filled trench storage capacitor electrodes of the FET. A layer of titanium is evaporated at a temperature of approximately 370 DEG C., so that the titanium has a substantially columnar grain structure and a minimum of matrix material. The bottom portions of the columnar grains have a lateral length that approximates the lateral length of the dielectric separating the source diffusion from the poly-filled trench. Thus, upon sintering at 700 DEG C. in an N2 atmosphere, titanium silicide will form over all exposed silicon regions as well as the dielectric, without shorting the FET electrodes together.
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申请公布号 |
US4983544(A) |
申请公布日期 |
1991.01.08 |
申请号 |
US19860920471 |
申请日期 |
1986.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LU, NICKY C.;MACHESNEY, BRIAN J.;MOHLER, RICK L.;MILES, GLEN L.;TING, CHUNG-YU;WARLEY, STEPHEN D. |
分类号 |
H01L21/3205;H01L21/768;H01L23/482;H01L23/52;H01L29/45 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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