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发明名称
Method of fabricating junction field effect transistor
摘要
申请公布号
US4983536(A)
申请公布日期
1991.01.08
申请号
US19890440930
申请日期
1989.11.24
申请人
GTE LABORATORIES INCORPORATED
发明人
BULAT, EMEL S.;TABASKY, MARVIN J.
分类号
H01L29/808;H01L21/337;H01L29/45;H01L29/772
主分类号
H01L29/808
代理机构
代理人
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