发明名称 |
Integratable power transistor with optimization of direct secondary breakdown phenomena. |
摘要 |
<p>An integratable power transistor with optimization of direct secondary breakdown phenomena which comprises a plurality of elementary transistors which are arranged side by side and comprise a plurality of cells (30), each of which is formed by an emitter region (16) surrounded by base (17) and collector (18) regions, with the emitter regions (16) arranged physically separated. According to the invention, the base regions (17) are also arranged physically separated and are mutually connected by resistive elements (27).</p> |
申请公布号 |
EP0404095(A2) |
申请公布日期 |
1990.12.27 |
申请号 |
EP19900111636 |
申请日期 |
1990.06.20 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
BOTTI, EDOARDO;TORAZZINA, ALDO |
分类号 |
H01L21/331;H01L21/8222;H01L27/06;H01L29/06;H01L29/10;H01L29/73;H01L29/732 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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