发明名称 Trench structured charge-coupled device.
摘要 <p>The charge transfer efficiency of a two-phase charge-coupled device cell is enhanced by providing a three-tiered built-in potential in the channel of each cell. Two lower potential tiers form a trenched potential well in the cell for storing charge. A higher potential tier between the trenched potential well of a cell and the potential well of a preceding neighbor cell provides a potential barrier preventing backflow of charge from well-to-well. The potential trench is located at the downstream end of the well adjacent a succeeding neighbor cell of the CCD.</p>
申请公布号 EP0404306(A2) 申请公布日期 1990.12.27
申请号 EP19900304315 申请日期 1990.04.23
申请人 TEKTRONIX, INC. 发明人 YANG, KEI-WEAN CALVIN;TAGGART, JOHN EDWARDS
分类号 H01L29/762;H01L21/339;H01L29/10;H01L29/768 主分类号 H01L29/762
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