发明名称 |
Trench structured charge-coupled device. |
摘要 |
<p>The charge transfer efficiency of a two-phase charge-coupled device cell is enhanced by providing a three-tiered built-in potential in the channel of each cell. Two lower potential tiers form a trenched potential well in the cell for storing charge. A higher potential tier between the trenched potential well of a cell and the potential well of a preceding neighbor cell provides a potential barrier preventing backflow of charge from well-to-well. The potential trench is located at the downstream end of the well adjacent a succeeding neighbor cell of the CCD.</p> |
申请公布号 |
EP0404306(A2) |
申请公布日期 |
1990.12.27 |
申请号 |
EP19900304315 |
申请日期 |
1990.04.23 |
申请人 |
TEKTRONIX, INC. |
发明人 |
YANG, KEI-WEAN CALVIN;TAGGART, JOHN EDWARDS |
分类号 |
H01L29/762;H01L21/339;H01L29/10;H01L29/768 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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