| 摘要 |
<p>In a circuit arrangement for drive of a thyristor with a phototransistor, the collector-emitter path of the phototransistor is between one of two alternating voltage terminals and a gate terminal of the thyristor. In order to prevent an activation of the unilluminated phototransistor due to a steep voltage edge (dv/dt) load), its base current given such a load is carried off via an IGFET of the enhancement type. This IGFET is controlled by an IGFET of the depletion type acting as a current source which lies between a gate terminal and source terminal of the enhancement type IGFET. A capacitor is connected in series with the depletion-type IGFET. This series connection lies between the two alternating voltage terminals.</p> |
