INTEGRATED LIGHT-RECEIVING SEMICONDUCTOR DEVICE

摘要

In a high impedance type light receiver circuit comprising a light receiving device (1), an amplifier circuit (3) for amplifying an output of the light receiving device (1) and an equalizer (4) for band compensation, a capacitor (41) of the equalizer (4) is formed by the same PN junction structure as that of the light receiving device (1), and the light receiving device (1), the amplifier circuit (3) and the equalizer (4) are integrated on one semiconductor substrate (101) so that adjustment of a time constant of the equalizer is not necessary. In this manner, the productivity of the high impedance type light receiver circuit which can attain a higher sensitivity than a trans-impedance type circuit is improved.