| 摘要 |
PURPOSE:To accelerate the reading-out operation in the stable state by a method wherein the first cell plate electrodes are formed on the above parts of source parts as the first charge accumulation parts likewise the second cell plate electrodes are formed on the above parts of the second accumulation parts. CONSTITUTION:The second charge accumulation parts 7 connected to the first charge accumulation parts 6 are formed on the above parts of the first cell plate electrodes 6; while the first cell plate electrodes 8 are formed on the above parts of source parts 2 as the first charge accumulation parts 6; furthermore, the second cell plate electrodes 9 are formed on the above parts of the second charge accumulation parts 7. Thus, the first and second charge accumulation parts 6, 7 for memory are formed on the surface and above parts of a semiconductor substrate 1 so that the capacitance of memory cell may be increased without increasing the space of the same. Through these procedures, the reading-out operation can be accelerated without performing any erroneous operation at all during the signal reading-out process. |
